PMN45EN,135
MOSFET N-CH 30V 5.2A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMN45EN-135 is a TrenchMOS™ N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This component offers a continuous drain current (Id) of 5.2A at 25°C and a maximum power dissipation of 1.75W (Tc). Key electrical parameters include a low on-resistance (Rds On) of 40mOhm at 3A and 10V, a gate charge (Qg) of 6.1 nC maximum at 4.5V, and input capacitance (Ciss) of 495pF maximum at 25V. The device features a maximum gate-source voltage (Vgs) of 20V and a gate threshold voltage (Vgs(th)) of 2V maximum at 1mA. Mounted via surface mount technology in a 6-TSOP (SC-74, SOT-457) package, this MOSFET operates at temperatures up to 150°C (TJ). It is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 6-TSOP |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 495 pF @ 25 V |
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