PMN40UPEA115
P-CHANNEL MOSFETManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMN40UPEA115 is a P-channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current capability of 4.7 A at 25°C ambient temperature. The device exhibits a maximum On-Resistance (Rds On) of 43 mOhm at 3 A and 4.5 Vgs. With a gate charge (Qg) of 23 nC at 4.5 V and input capacitance (Ciss) of 1820 pF at 10 Vds, it is optimized for efficient switching. The PMN40UPEA115 supports drive voltages from 1.8 V to 4.5 V and has a maximum gate-source voltage of ±8 V. It operates across a wide temperature range of -55°C to 150°C. Packaged in a 6-TSOP (SC-74, SOT-457) surface mount configuration, it offers power dissipation of 500 mW ambient or 8.33 W at case temperature. This MOSFET is suitable for use in power management, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 10 V |
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