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PMN38EN,135

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PMN38EN,135

MOSFET N-CH 30V 5.4A 6TSOP

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMN38EN-135, offers a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 5.4A (Tc) at 25°C. This device features a low on-resistance of 38mOhm maximum at 3A and 10V Vgs. The Gate Charge (Qg) is 6.1 nC maximum at 4.5V Vgs, and the input capacitance (Ciss) is 495 pF maximum at 25V Vds. Designed for surface mount applications, it is housed in an SC-74 (SOT-457) package and supports a maximum power dissipation of 1.75W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in consumer electronics and industrial applications. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Rds On (Max) @ Id, Vgs38mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.75W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSC-74
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds495 pF @ 25 V

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