PMN35EN,115
MOSFET N-CH 30V 5.1A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMN35EN-115 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.1A at 25°C. The low on-resistance (Rds On) of 31mOhm is achieved at a drain current of 5.1A and a gate-source voltage (Vgs) of 10V. Key parameters include a gate charge (Qg) of 9.3 nC maximum at 10V Vgs and an input capacitance (Ciss) of 334 pF maximum at 15V Vds. This device is housed in a compact SC-74 (SOT-457) surface-mount package, offering a maximum power dissipation of 500mW. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in various industrial and consumer electronics, including power management and signal switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 15 V |
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