PMN34UN,135
MOSFET N-CH 30V 4.9A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PMN34UN-135 is a N-Channel enhancement mode MOSFET. This component features a 30 V drain-source voltage capability and a continuous drain current of 4.9 A at 25°C. The Rds(on) is specified as a maximum of 46 mOhm at 2 A and 4.5 Vgs. The device is housed in a SC-74, SOT-457 package designed for surface mounting. Gate charge (Qg) is a maximum of 9.9 nC at 4.5 Vgs, and input capacitance (Ciss) is a maximum of 790 pF at 25 Vds. Power dissipation is rated at 1.75 W (Tc). This MOSFET is suitable for applications across automotive, industrial, and consumer electronics sectors. It operates within a temperature range of -55°C to 150°C (TJ). Drive voltages range from 1.8 V to 4.5 V. The component is supplied on Tape & Reel (TR).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 1mA (Typ) |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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