PMN34LN,135
MOSFET N-CH 20V 5.7A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PMN34LN-135 is an N-channel power MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 5.7A at 25°C. With a low on-resistance (Rds On) of 34mOhm at 2.5A and 10V Vgs, it minimizes conduction losses. The device is packaged in an SC-74 (SOT-457) surface-mount configuration, with a maximum power dissipation of 1.75W at the case temperature. Key parameters include a gate charge (Qg) of 13.1 nC at 10V Vgs and an input capacitance (Ciss) of 500 pF at 20V Vds. It operates across a wide temperature range from -55°C to 150°C. This component is commonly employed in consumer electronics and industrial applications requiring robust power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 20 V |
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