PMN28UN,135
MOSFET N-CH 12V 5.7A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMN28UN-135, offers a 12V drain-source voltage and a continuous drain current of 5.7A at 25°C (Tc). This surface mount component, housed in a 6-TSOP (SC-74, SOT-457) package, features a maximum power dissipation of 1.75W (Tc) and a low on-resistance of 34mOhm at 2A and 4.5V Vgs. Key parameters include a typical gate threshold voltage of 700mV at 1mA and a gate charge of 10.1nC at 4.5V. Maximum gate-source voltage is ±8V. This MOSFET is suitable for applications in consumer electronics and general-purpose switching.
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 1mA (Typ) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 10 V |
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