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PMN27UN,135

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PMN27UN,135

MOSFET N-CH 20V 5.7A 6TSOP

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The NXP USA Inc. TrenchMOS™ PMN27UN-135 is an N-channel power MOSFET with a Drain-Source Voltage (Vdss) of 20 V. It features a maximum continuous drain current of 5.7 A (Tc) and a maximum power dissipation of 1.75 W (Tc). The Rds On is specified at 34 mOhm maximum at 2 A and 4.5 V Vgs. Key parameters include a Gate Charge (Qg) of 10.6 nC maximum at 4.5 V Vgs and Input Capacitance (Ciss) of 740 pF maximum at 10 V Vds. This device operates over a temperature range of -55°C to 150°C (TJ) and is supplied in an SC-74 package for surface mounting. Drive voltages range from 1.8 V to 4.5 V, with a maximum Vgs of ±8V. This component is utilized in applications such as power management and consumer electronics.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1.75W (Tc)
Vgs(th) (Max) @ Id700mV @ 1mA (Typ)
Supplier Device PackageSC-74
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 10 V

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