PMN25UN,115
MOSFET N-CH 20V 6A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMN25UN-115 is an N-Channel MOSFET designed for demanding applications. This component offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C ambient temperature. Featuring a low on-resistance of 27mOhm at 6A and 4.5V Vgs, it minimizes conduction losses. The device supports a gate drive voltage range of 1.8V to 4.5V for optimal Rds(on) performance. With a maximum power dissipation of 530mW (Ta) and 6.25W (Tc), it is suitable for power management tasks in sectors such as consumer electronics and industrial automation. The PMN25UN-115 is packaged in an SC-74 (SOT-457) surface mount case and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 10nC at 4.5V and input capacitance (Ciss) of 470pF at 10V. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 530mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 10 V |
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