PMN25EN,115
MOSFET N-CH 30V 6.2A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMN25EN-115, an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 6.2A at 25°C. The Rds On is specified at a maximum of 23mOhm when driven at 10V Vgs and drawing 6.2A.
Key electrical characteristics include a Gate Charge (Qg) of 11 nC maximum at 10V Vgs and an input capacitance (Ciss) of 492 pF maximum at 15V Vds. The device offers a power dissipation of 540mW (Ta) and 6.25W (Tc). Operating across a wide temperature range of -55°C to 150°C (TJ), the PMN25EN-115 is packaged in an SC-74 (SOT-457) surface-mount configuration, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 15 V |
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