PMN23UN,165
MOSFET N-CH 20V 6.3A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMN23UN-165, offers a 20V Vds(on) rating and 6.3A continuous drain current. This device features a low on-resistance of 28mOhm maximum at 2A and 4.5V gate drive. With a gate charge (Qg) of 10.6 nC maximum at 4.5V and input capacitance (Ciss) of 740 pF maximum at 10V, it is suitable for various power management applications. The MOSFET is packaged in a compact SC-74 (SOT-457) surface mount case, designed for efficient thermal management with a maximum power dissipation of 1.75W at 25°C (Tc). Operating temperature range is -55°C to 150°C. This component is commonly found in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Tc) |
| Vgs(th) (Max) @ Id | 700mV @ 1mA (Typ) |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 10 V |
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