PMN22XN,115
MOSFET N-CH 30V 5.7A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. N-Channel Power MOSFET, PMN22XN-115, offers a 30V drain-source voltage and a continuous drain current of 5.7A at 25°C. This device features a low on-resistance of 27mOhm at 5.7A and 4.5V Vgs, with a gate charge of 10nC maximum at 4.5V. The input capacitance (Ciss) is specified at 585pF maximum at 15V. Packaged in a compact SC-74 (SOT-457) surface-mount configuration and supplied on tape and reel, the PMN22XN-115 is suitable for applications requiring efficient power switching. Its thermal performance includes a maximum power dissipation of 545mW (Ta) and 6.25W (Tc), operating across a temperature range of -55°C to 150°C. This component is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 545mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 15 V |
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