PMN20EN,115
MOSFET N-CH 30V 6.7A 6TSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PMN20EN-115 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 6.7A at 25°C (Tj). The Rds On is specified at a maximum of 20mOhm at 6.7A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 18.6 nC (max) at 10V and an Input Capacitance (Ciss) of 630 pF (max) at 15V. The device is housed in an SC-74 (SOT-457) surface mount package and offers a maximum power dissipation of 545mW (Ta). It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. This MOSFET is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tj) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 545mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SC-74 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 15 V |
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