PMG45UN,115
MOSFET N-CH 20V 3A 6TSSOPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PMG45UN-115, an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C (Ta), with a maximum on-resistance (Rds On) of 55mOhm at 3A and 4.5V. Housed in a compact 6-TSSOP package, the PMG45UN-115 offers a maximum power dissipation of 375mW (Ta) and 4.35W (Tc). Key electrical characteristics include a gate charge (Qg) of 3.3 nC (max) at 4.5V and input capacitance (Ciss) of 184 pF (max) at 10V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 375mW (Ta), 4.35W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSSOP |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 10 V |
Request a Quote
Clients Also Buy
BUK9516-75B,127
MOSFET N-CH 75V 67A TO220AB
BUK9535-100A,127
MOSFET N-CH 100V 41A TO220AB
PMR370XN,115
MOSFET N-CH 30V 840MA SC75
