PMFPB8040XP,115
MOSFET P-CH 20V 2.7A HUSON6Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. P-Channel MOSFET, part number PMFPB8040XP-115, offers a 20V drain-source voltage and a continuous drain current of 2.7A at 25°C (Ta). This device features a low on-resistance of 102mOhm at 2.7A and 4.5V gate-source voltage. The 6-HUSON (2x2) package facilitates efficient thermal management with a power dissipation of 485mW (Ta) and 6.25W (Tc). Key parameters include a gate charge of 8.6 nC at 4.5V Vgs and an input capacitance of 550 pF at 10V Vds. The built-in Schottky diode provides isolated functionality. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 485mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
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