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PMF87EN,115

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PMF87EN,115

MOSFET N-CH 30V 1.7A SOT323-3

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. PMF87EN-115 is a surface-mount N-Channel MOSFET housed in an SC-70 (SOT-323) package. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 1.7 A at 25°C. With a maximum on-resistance (Rds On) of 80 mOhm at 1.7 A and 10 V gate-source voltage, it offers efficient switching characteristics. The device supports a drive voltage range of 4.5V to 10V and has a gate charge (Qg) of 4.7 nC at 10 V. Input capacitance (Ciss) is a maximum of 135 pF at 15 V. The power dissipation is rated at 275 mW (Ta). The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 1.7A, 10V
FET Feature-
Power Dissipation (Max)275mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSC-70
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds135 pF @ 15 V

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