PMF780SN,115
MOSFET N-CH 60V 570MA SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ series N-Channel MOSFET, part number PMF780SN-115, offers a 60V drain-source voltage and a continuous drain current of 570mA at 25°C. This surface mount component, housed in an SC-70 (SOT-323) package, features a maximum ON-resistance of 920mOhm at 300mA and 10V Vgs. Key parameters include a gate charge of 1.05nC at 10V Vgs and an input capacitance of 23pF at 30V Vds. With a maximum power dissipation of 560mW (Tc) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 570mA (Ta) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.05 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 30 V |
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