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PMF77XN,115

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PMF77XN,115

MOSFET N-CH 30V 1.5A SOT323-3

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. PMF77XN-115 is an N-Channel MOSFET designed for surface mount applications in the SC-70, SOT-323 package. This component offers a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.5 A at 25°C. The device features a low on-resistance (Rds On) of 97 mOhm at 1.5 A and 4.5 V Vgs, with a threshold voltage (Vgs(th)) of 1.5 V at 250 µA. Key parameters include a gate charge (Qg) of 2.9 nC at 4.5 V and input capacitance (Ciss) of 170 pF at 15 V. Power dissipation capabilities are 270 mW at ambient temperature and 1.92 W at case temperature. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications across consumer electronics, industrial automation, and automotive sectors where efficient switching and low power loss are critical. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs97mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)270mW (Ta), 1.92W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-70
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 15 V

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