PMF63UN,115
MOSFET N-CH 20V 1.8A SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PMF63UN-115 is an N-Channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 1.8 A at 25°C. With a maximum on-resistance (Rds On) of 74 mOhm at 1.8 A and 4.5 V gate-source voltage, it is suitable for power management and switching applications. The device operates within a temperature range of -55°C to 150°C and is supplied in an SC-70 (SOT-323) package on tape and reel. Key electrical parameters include a gate charge (Qg) of 3.3 nC and an input capacitance (Ciss) of 185 pF. This MOSFET is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 1.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 275mW (Ta), 1.785W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 185 pF @ 10 V |