PMF400UN,115
MOSFET N-CH 30V 830MA SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMF400UN-115 is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-to-Source voltage (Vdss) of 30 V and offers a continuous drain current (Id) of 830 mA at 25°C. The Rds On is specified at a maximum of 480 mOhm at 200 mA and 4.5 V, with a drive voltage range from 1.8 V to 4.5 V. Key parameters include a gate charge (Qg) of 0.89 nC at 4.5 V and an input capacitance (Ciss) of 43 pF at 25 V. The device is available in a compact SC-70 (SOT-323-3) package, suitable for surface mounting. Maximum power dissipation is 560 mW (Tc). This MOSFET is utilized in various industries including consumer electronics and industrial automation. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 830mA (Ta) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 25 V |
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