PMF3800SN,115
MOSFET N-CH 60V 260MA SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMF3800SN-115 is an N-Channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 260 mA at 25°C. The on-resistance (Rds On) is a maximum of 4.5 Ohms at 500 mA and 10 V gate drive. With a gate charge (Qg) of 0.85 nC maximum at 10 V and input capacitance (Ciss) of 40 pF maximum at 10 V/10 V, it is suitable for various switching applications. The device operates across a temperature range of -55°C to 150°C. It is packaged in an SC-70 (SOT-323) case and supplied on tape and reel. This MOSFET finds application in general-purpose switching, power management, and portable electronics.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 1mA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |