PMF290XN,115
MOSFET N-CH 20V 1A SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PMF290XN-115 is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C. With a maximum on-resistance (Rds On) of 350mOhm at 200mA and 4.5V gate-source voltage, it offers low conduction losses. The device supports gate drive voltages from 2.5V to 4.5V, with a threshold voltage (Vgs(th)) of 1.5V. Key parameters include a maximum power dissipation of 560mW at 25°C, a gate charge (Qg) of 0.72 nC at 4.5V, and an input capacitance (Ciss) of 34 pF at 20V. The PMF290XN-115 is housed in an SC-70 (SOT-323) surface-mount package suitable for compact designs. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized across various industries including consumer electronics and industrial automation. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 20 V |
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