PMF280UN,115
MOSFET N-CH 20V 1.02A SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PMF280UN-115. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.02A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 340mOhm at 200mA and 4.5V Vgs. The gate charge (Qg) is 0.89nC at 4.5V, and input capacitance (Ciss) is 45pF at 20V. With a maximum power dissipation of 560mW (Tc), this MOSFET is suitable for applications requiring low power consumption. It operates within a temperature range of -55°C to 150°C (TJ). The component is housed in an SC-70, SOT-323-3 package for surface mounting and is supplied on tape and reel (TR). This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.02A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 20 V |
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