PMF250XN,115
MOSFET N-CH 30V 900MA SOT323-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMF250XN-115, an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 900mA at 25°C. The PMF250XN-115 offers a low on-resistance (Rds On) of 300mOhm maximum at 900mA and 4.5V Vgs. Key parameters include a gate charge (Qg) of 1.1 nC maximum at 4.5V and an input capacitance (Ciss) of 50 pF maximum at 15V Vds. Power dissipation is rated at 275mW (Ta) and 1.065W (Tc). The device operates across a temperature range of -55°C to 150°C and is housed in an SC-70 (SOT-323-3) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 900mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 275mW (Ta), 1.065W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-70 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 15 V |
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