PMCM650VNEZ
MOSFET N-CH 12V 6.4A 6WLCSPManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PMCM650VNEZ, an N-Channel MOSFET designed for high-efficiency power management applications. This component features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 6.4A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 25mOhm maximum at 3A and 4.5V gate drive. With a gate charge (Qg) of 15.4 nC max at 4.5V, it ensures efficient switching performance.
The PMCM650VNEZ is housed in a compact 6-WLCSP package with dimensions of 1.48x0.98, making it suitable for space-constrained designs in consumer electronics, portable devices, and industrial control systems. Its maximum power dissipation is 556mW (Ta) or 12.5W (Tc). The operating temperature range is from -55°C to 150°C (TJ). This MOSFET utilizes advanced Metal Oxide technology for optimal performance.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 556mW (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-WLCSP (1.48x0.98) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 6 V |
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