PHX9NQ20T,127
MOSFET N-CH 200V 5.2A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PHX9NQ20T-127 is a 200V N-Channel Power MOSFET designed for robust performance in demanding applications. This component offers a continuous drain current of 5.2A at 25°C (Tc) and a maximum power dissipation of 25W (Tc). Key electrical characteristics include a low on-resistance of 400mOhm at 4.5A and 10V (Vgs), with a gate charge of 24 nC at 10V (Vgs). Input capacitance (Ciss) is specified at a maximum of 959 pF at 25V (Vds). The device features a ±20V maximum gate-source voltage and a threshold voltage of 4V at 1mA. Packaged in a TO-220F (TO-220-3 Full Pack, Isolated Tab) for through-hole mounting, it operates within an industrial temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply units, motor control, and general-purpose switching applications within the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 959 pF @ 25 V |
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