PHX45NQ11T,127
MOSFET N-CH 110V 30.4A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHX45NQ11T-127 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vds) of 110 V and a continuous drain current (Id) of 30.4 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 25 mOhm at 25 A and 10 V gate-source voltage (Vgs). With a gate charge (Qg) of 61 nC at 10 V and input capacitance (Ciss) of 2600 pF at 25 V, this device offers efficient switching characteristics. The maximum power dissipation (Pd) is 62.5 W at 25°C (Tc). Packaged in a TO-220F (TO-220-3 Full Pack, Isolated Tab) through-hole configuration, it operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply and motor control applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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