PHX34NQ11T,127
MOSFET N-CH 110V 24.8A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHX34NQ11T-127, offers 110V drain-source voltage and a continuous drain current of 24.8A at 25°C (Tc). This device features a low on-resistance of 40mOhm maximum at 17A and 10V Vgs, with a gate charge of 40nC maximum. With a maximum power dissipation of 56.8W (Tc), it is suitable for applications requiring efficient power switching. The PHX34NQ11T-127 is housed in a TO-220F package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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