PHX23NQ11T,127
MOSFET N-CH 110V 16A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHX23NQ11T-127 is an N-Channel power MOSFET designed for high-performance switching applications. This component features a drain-source voltage (Vdss) of 110V and a continuous drain current (Id) of 16A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 70mOhm maximum at 13A and 10V Vgs, facilitating efficient power delivery. With a gate charge (Qg) of 22 nC maximum at 10V, it supports fast switching speeds. Housed in a TO-220F package, this through-hole mounted MOSFET is suitable for applications requiring thermal management and isolation. Key parameters include a maximum power dissipation of 41.6W (Tc) and an operating temperature range of -55°C to 150°C (TJ). This component is utilized in power supply units, motor control, and other industrial power conversion systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
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