PHX23NQ10T,127
MOSFET N-CH 100V 13A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHX23NQ10T-127 is a N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C (Tc). The Rds On is specified at a maximum of 70mOhm at 13A and 10V gate drive. With a maximum power dissipation of 27W (Tc), it is housed in an isolated TO-220F package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 22 nC @ 10V and input capacitance (Ciss) of 1187 pF @ 25V. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in power supply, automotive, and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1187 pF @ 25 V |
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