PHX18NQ20T,127
MOSFET N-CH 200V 8.2A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ is an N-Channel power MOSFET, part number PHX18NQ20T-127. This component features a 200 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 8.2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 180mOhm at 8A and 10V gate-source voltage, it offers efficient switching. The device has a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1850 pF at 25V. Designed for through-hole mounting in a TO-220F package, it provides 30W of power dissipation at 25°C (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
