PHX18NQ11T,127
MOSFET N-CH 110V 12.5A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHX18NQ11T-127 is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 110 V and a continuous drain current (Id) of 12.5A at 25°C (Tc), this component offers robust performance. With a maximum Rds(on) of 90mOhm at 9A and 10V Vgs, it minimizes conduction losses. The device is housed in a TO-220F package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 635 pF at 25V. The maximum power dissipation is rated at 31.2W (Tc). This MOSFET is utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
