PHX14NQ20T,127
MOSFET N-CH 200V 7.6A TO220FManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHX14NQ20T-127 is a 200V N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a maximum continuous drain current of 7.6A (Tc) and a low on-resistance of 230mOhm at 7A, 10V, this device offers optimized performance for power management solutions. The TO-220F package provides reliable thermal dissipation with a maximum power dissipation of 30W (Tc) and a junction temperature range of -55°C to 150°C. Key parameters include a Vgs(th) of 4V (max) at 1mA, a gate charge of 38 nC at 10V, and an input capacitance of 1500 pF at 25V. This MOSFET is suitable for use in industrial power supplies, automotive electronics, and other demanding applications requiring robust power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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