PHW80NQ10T,127
MOSFET N-CH 100V 80A TO247-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHW80NQ10T-127 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 263W. Its low on-resistance (Rds On) of 15mOhm at 25A and 10V ensures efficient power transfer. The MOSFET utilizes a TrenchMOS™ technology for enhanced performance and is housed in a TO-247-3 through-hole package. Key parameters include a gate charge (Qg) of 109 nC at 10V and an input capacitance (Ciss) of 4720 pF at 25V. This component is suitable for power switching applications across various industries, including automotive and industrial power systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4720 pF @ 25 V |
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