PHU78NQ03LT,127
MOSFET N-CH 25V 75A IPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHU78NQ03LT-127 is a 25V N-Channel power MOSFET in an IPAK package. This component offers a continuous drain current of 75A at 25°C (Tc) and a maximum power dissipation of 107W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 9mOhm at 25A and 10V (Vgs), and a drain-to-source breakdown voltage (Vdss) of 25V. Gate charge (Qg) is specified at a maximum of 11 nC at 4.5V (Vgs), with input capacitance (Ciss) reaching 970 pF at 12V (Vds). The device supports drive voltages from 5V to 10V and has a gate-source voltage (Vgs) limit of ±20V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in the automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 12 V |
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