PHU66NQ03LT,127
MOSFET N-CH 25V 66A IPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PHU66NQ03LT-127, offers a 25V drain-source voltage and a continuous drain current of 66A at 25°C (Tc). This power MOSFET features a maximum power dissipation of 93W (Tc) and a low on-resistance of 10.5mOhm at 25A and 10V. With a gate charge of 12nC (max) at 5V and input capacitance of 860pF (max) at 25V, it is designed for efficient switching. The PHU66NQ03LT-127 utilizes a TO-251-3 Short Leads, IPAK package suitable for through-hole mounting and operates across an industrial temperature range of -55°C to 175°C (TJ). This component is commonly found in power management applications across automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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