PHU11NQ10T,127
MOSFET N-CH 100V 10.9A IPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHU11NQ10T-127, offers a 100 V drain-to-source breakdown voltage and a continuous drain current of 10.9 A at 25°C (Tc). This device features a maximum on-resistance of 180 mOhm at 9 A and 10 V gate-source voltage. The IPAK package, TO-251-3 Short Leads, TO-251AA, facilitates through-hole mounting. With a maximum power dissipation of 57.7 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for applications in automotive and industrial power management. Key parameters include a gate charge of 14.7 nC at 10 V and input capacitance of 360 pF at 25 V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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