PHU101NQ03LT,127
MOSFET N-CH 30V 75A IPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHU101NQ03LT-127 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 166W (Tc). The low on-resistance of 5.5mOhm at 25A and 10V gate drive (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 23 nC at 5V and input capacitance (Ciss) of 2180 pF at 25V. The IPAK (TO-251-3 Short Leads, TO-251AA) package provides a robust through-hole mounting solution for demanding environments. This component is suitable for use in automotive, industrial motor control, and power supply applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V |
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