PHT8N06LT,135
MOSFET N-CH 55V 3.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHT8N06LT-135 is a 55V N-channel power MOSFET. This device features a continuous drain current of 3.5A (Ta) at 25°C and a maximum Rds(on) of 80mOhm at 5A, 5V. The gate charge is 11.2 nC (max) at 5V Vgs, with input capacitance Ciss at 650 pF (max) @ 25V Vds. Designed for surface mount applications, it is supplied in an SC-73 package (TO-261-4, TO-261AA) on tape and reel. Power dissipation is rated at 1.8W (Ta) and 8.3W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for power management and switching applications across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±13V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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