PHT6N06T,135
MOSFET N-CH 55V 5.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHT6N06T-135 is a N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 5.5A at 25°C, with a maximum power dissipation of 8.3W. The Rds On is specified at a maximum of 150mOhm at 5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 5.6 nC and input capacitance (Ciss) of 175 pF at 25V. The device is housed in a TO-261-4, TO-261AA (SC-73) surface-mount package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in industries such as automotive and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 25 V |
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