PHT6N06LT,135
MOSFET N-CH 55V 2.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHT6N06LT-135 is an N-channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain current (Id) of 2.5 A at 25°C ambient. The Rds On is specified at a maximum of 150 mOhms at 5 A and 5 V gate drive. Key parameters include a maximum gate charge (Qg) of 4.5 nC at 5 V and an input capacitance (Ciss) of 330 pF at 25 V. Power dissipation is rated at 1.8 W (Ta) and 8.3 W (Tc). The device is housed in a TO-261-4, TO-261AA (SC-73) package, supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±13V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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