PHT4NQ10LT,135
MOSFET N-CH 100V 3.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHT4NQ10LT-135 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 3.5 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 250mOhm at 1.75 A and 5 V gate drive voltage. With a maximum power dissipation of 6.9 W (Tc), it is suitable for power management in sectors such as automotive and industrial automation. The PHT4NQ10LT-135 is packaged in a surface mount TO-261-4 (SC-73) package, supplied in Tape & Reel. Key electrical characteristics include a gate charge (Qg) of 12.2 nC at 5 V and input capacitance (Ciss) of 374 pF at 25 V. Operating temperature ranges from -65°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.75A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 6.9W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 374 pF @ 25 V |
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