PHT2NQ10T,135
MOSFET N-CH 100V 2.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHT2NQ10T-135 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 430 mOhm at 1.75 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 5.1 nC at 10 V and input capacitance (Ciss) of 160 pF at 25 V. With a maximum power dissipation of 6.25 W (Tc), it is suitable for surface mount applications, housed in a TO-261-4, TO-261AA (SC-73) package. Operating temperature range is -65°C to 150°C (TJ). This MOSFET is utilized in various industries including automotive and industrial power control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
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