PHT11N06LT,135
MOSFET N-CH 55V 4.9A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHT11N06LT-135 is a 55V N-Channel MOSFET designed for surface mount applications. This component offers a continuous drain current of 4.9A at 25°C (Ta) with a maximum Rds On of 40mOhm at 5A and 5V gate drive. Key parameters include a gate charge (Qg) of 17 nC at 5V and input capacitance (Ciss) of 1400 pF at 25V. The device is housed in a TO-261-4 (SC-73) package and supports an operating temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 1.8W (Ta) and 8.3W (Tc). This MOSFET is suitable for use in power management and general switching applications across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±13V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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