PHP75NQ08T,127
MOSFET N-CH 75V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHP75NQ08T-127, offers a 75V drain-source voltage (Vdss) and 75A continuous drain current at 25°C (Id). This through-hole component in a TO-220AB package features a low on-resistance of 13mOhm at 25A and 10V (Rds On). With a maximum power dissipation of 157W (Tc), it is suitable for applications requiring high current handling. Key parameters include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 1985 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is widely utilized in industrial power supplies, automotive systems, and electric vehicle charging infrastructure.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 25 V |
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