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PHP71NQ03LT,127

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PHP71NQ03LT,127

MOSFET N-CH 30V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, PHP71NQ03LT-127, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). This device features a low on-resistance of 10mOhm maximum at 25A and 10V, with a maximum power dissipation of 120W (Tc). The gate charge (Qg) is specified at 13.2 nC maximum at 5V Vgs, and input capacitance (Ciss) is 1220 pF maximum at 25V Vds. The PHP71NQ03LT-127 is packaged in a TO-220AB through-hole configuration, suitable for applications in automotive, industrial power control, and high-power switching systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)120W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 25 V

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