PHP63NQ03LT,127
MOSFET N-CH 30V 68.9A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHP63NQ03LT-127, is designed for high-efficiency power switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 68.9A at 25°C (Tc). With a maximum Rds(on) of 13mOhm at 25A and 10V, it offers low conduction losses. The device has a gate charge (Qg) of 9.6 nC at 5V and an input capacitance (Ciss) of 920 pF at 25V. Dissipating up to 111W (Tc), it is housed in a TO-220AB through-hole package, suitable for demanding thermal environments. Operating temperature ranges from -55°C to 175°C (TJ). Applications include automotive systems, power supplies, and motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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