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PHP55N03LTA,127

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PHP55N03LTA,127

MOSFET N-CH 25V 55A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. PHP55N03LTA-127 is an N-Channel TrenchMOS™ Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 55A at 25°C, with a maximum power dissipation of 85W. The device exhibits a low on-resistance (Rds On) of 14mOhm at 25A and 10V, facilitating reduced conduction losses. Key parameters include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 950 pF at 25V. It is housed in a standard TO-220AB package, suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)85W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V

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