PHP34NQ11T,127
MOSFET N-CH 110V 35A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PHP34NQ11T-127, a high-performance N-Channel TrenchMOS™ MOSFET. This component features a drain-source breakdown voltage (Vds) of 110V and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The on-resistance (Rds On) is specified at a maximum of 40mOhm at 17A and 10V drive voltage. Key characteristics include a gate charge (Qg) of 40nC (max) at 10V and input capacitance (Ciss) of 1700pF (max) at 25V. The device operates over a wide temperature range of -55°C to 175°C (TJ). Housed in a standard TO-220AB package, this through-hole mounted MOSFET is suitable for applications in power management, industrial motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 110 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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