PHP3055E,127
MOSFET N-CH 60V 10.3A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PHP3055E-127, a TrenchMOS™ N-Channel power MOSFET in a TO-220AB package. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 10.3A at 25°C (Tc), with a maximum power dissipation of 33W (Tc). The Rds(On) is specified at a maximum of 150mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 5.8 nC (max) at 10V and input capacitance (Ciss) of 250 pF (max) at 25V. This device operates within an ambient temperature range of -55°C to 175°C (TJ). Applications for this through-hole mounted component span automotive, industrial, and general-purpose power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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